Monolayer MoS2/n-Si Heterostructure Schottky Solar Cell

Monolayer MoS2 has a promising optoelectronics property, with bandgap in the visible range; material is potential candidate for solar cell applications. In this work, we grew monolayers using low-pressure chemical vapor deposition approach. To produce uniform wafer-scale monolayer films, precursors molybdenum dioxide (MoO2) and sulfur (S) are utilized. Atomic force microscopy was used to quantify thickness of monolayers, result validated by Raman spectroscopy. Transmission electron (TEM) confirm crystalline quality photoluminescence spectroscopy evaluate their optical properties. We were able create Schottky up 1 cm2 area transferring film n-type silicon. The MoS2/n-Si demonstrated photovoltaic characteristics short circuit current density 14.8 mA cm−2 an open-circuit voltage 0.32 V under 100 mW illumination. fill factor energy conversion efficiency 53% 2.46%, respectively, highest external quantum at 530 nm being 44%.